Semiconductor device
US7521801B2 · kind B2 · utility
0Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 23, 2006 |
| Grant date | Apr 21, 2009 |
| Priority date | — |
| Expiry date | Jun 13, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/05042
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Ti barrier film and a TiN barrier film are formed between a top-level pad made of copper or an alloy film mainly composed of copper and an Al pad. The Ti barrier film is formed to have a greater thickness than the TiN barrier film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.