Conformal doping apparatus and method
US7524743B2 · kind B2 · utility
14Cited by
10References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2005 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Nov 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.