Vikram Singh
49Patents
13h-index
75Co-inventors
84Inventor score
Filing activity: Jun 25, 1997 → Dec 10, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5968275A | Methods and apparatus for passivating a substrate in a plasma reactor | Electricity | 543 | Expired |
| US6596654B1 | Gap fill for high aspect ratio structures | Electricity | 367 | Expired |
| US6846745B1 | High-density plasma process for filling high aspect ratio structures | Electricity | 272 | Expired |
| US6042687A | Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing | Electricity | 99 | Expired |
| US8926850B2 | Plasma processing with enhanced charge neutralization and process control | Electricity | 54 | Active |
| US8101510B2 | Plasma processing apparatus | Chemistry; Metallurgy | 46 | Active |
| US9123509B2 | Techniques for plasma processing a substrate | Electricity | 32 | Active |
| US6468384B1 | Predictive wafer temperature control system and method | Electricity | 30 | Expired |
| US8312738B2 | Integrated controlled freeze zone (CFZ) tower and dividing wall (DWC) for enhanced hydrocarbon recovery | Emerging Cross-Sectional Technologies | 25 | Active |
| US7001854B1 | Hydrogen-based phosphosilicate glass process for gap fill of high aspect ratio structures | Electricity | 22 | Expired |
| US7397048B2 | Technique for boron implantation | Electricity | 17 | Active |
| US6787483B1 | Gap fill for high aspect ratio structures | Electricity | 16 | Expired |
| US7524743B2 | Conformal doping apparatus and method | Electricity | 14 | Active |
| US7067440B1 | Gap fill for high aspect ratio structures | Chemistry; Metallurgy | 13 | Expired |
| US8188445B2 | Ion source | Emerging Cross-Sectional Technologies | 11 | Active |
| US7453059B2 | Technique for monitoring and controlling a plasma process | Electricity | 11 | Active |
| US9706634B2 | Apparatus and techniques to treat substrates using directional plasma and reactive gas | Electricity | 10 | Active |
| US8450193B2 | Techniques for temperature-controlled ion implantation | Electricity | 7 | Active |
| US7122485B1 | Deposition profile modification through process chemistry | Electricity | 7 | Expired |
| US7863194B2 | Implantation of multiple species to address copper reliability | Electricity | 7 | Active |
| US8664098B2 | Plasma processing apparatus | Chemistry; Metallurgy | 6 | Active |
| US9514912B2 | Control of ion angular distribution of ion beams with hidden deflection electrode | Electricity | 5 | Active |
| US8603591B2 | Enhanced etch and deposition profile control using plasma sheath engineering | Electricity | 5 | Active |
| US8664561B2 | System and method for selectively controlling ion composition of ion sources | Electricity | 5 | Active |
| US7476849B2 | Technique for monitoring and controlling a plasma process | Electricity | 4 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.