Direct tailoring of the composition and density of ALD films
US7524765B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 2, 2005 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Nov 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method comprising introducing an organometallic precursor according to a first set of conditions in the presence of a substrate; introducing the organometallic precursor according to a different second set of conditions in the presence of the substrate; and forming a layer comprising a moiety of the organometallic precursor on the substrate according to an atomic layer deposition process. A system comprising a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor comprising a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures formed in a plurality of dielectric layers formed on the substrate and each of the plurality of interconnect structures separated from the plurality of dielectric layers by a barrier layer formed according to an atomic layer deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.