Method for writing a large-area closed curvilinear pattern with a cartesian electron beam writing system
US7525109B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2006 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Jun 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31764
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A method for operating a Cartesian-type electron beam (e-beam) lithography (EBL) tool enables the efficient and precise writing of a closed curvilinear pattern, such as a circle, over a wide area of a workpiece. The curvilinear pattern overlies a plurality of contiguous fields of the EBL tool's x-y positioning stage, and the stage is moved along a path defined by the contiguous fields. Alignment marks associated with the first and next-to-last fields are formed on the specimen. The alignment marks are used to adjust the shape of the last field so that when the e-beam is scanned in the last field there is a substantially continuous connection of the pattern between the next-to-last field and the first field. The invention is particularly applicable to making a master disk with concentric circular tracks for nanoimprinting patterned magnetic recording disks.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.