Multiple irradiation effect-corrected dose determination technique for charged particle beam lithography
US7525110B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 6, 2007 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Sep 28, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y40/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A charged-particle beam microlithographic apparatus is generally made up of a pattern writing unit and a system controller. The writer has an electron beam source and a pattern generator for forming a pattern image on a workpiece. The system controller includes a unit for correcting proximity and fogging effects occurrable during pattern writing. This unit has a first calculator for calculating a proximity effect-corrected dose, a functional module for calculation of a fog-corrected dose while including therein the influence of the proximity effect, and a multiplier for combining the calculated doses together to determine a total corrected dose. The module has a second calculator for calculating a variable real value representing the proximity-effect influence to be considered during fog correction, and a third calculator for calculating using this value the fog-corrected dose.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.