CMOS imager pixel designs
US7525134B2 · kind B2 · utility
1Cited by
15References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2006 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Jul 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/803
Abstract
A charge storage capacitor which is connected to various light sensitive and/or electrical elements of a CMOS imager, as well as methods of formation, are disclosed. The charge storage capacitor may be formed entirely over a field oxide region of the CMOS imager, entirely over an active area of a pixel sensor cell, or partially over a field oxide region and partially over an active pixel area of a pixel sensor cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.