JFET device with improved off-state leakage current and method of fabrication
US7525138B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2007 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | May 3, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0512
Abstract
A junction field effect transistor comprises a semiconductor substrate. A first impurity region of a first conductivity type is formed in the substrate. A second impurity region of the first conductivity type is formed in the substrate and spaced apart from the first impurity region. A channel region of the first conductivity type is formed between the first and second impurity regions. A gate region of a second conductivity type is formed in the substrate between the first and second impurity regions. A gap region is formed in the substrate between the gate region and the first impurity region such that the first impurity region is spaced apart from the gate region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.