RF power transistor device with metal electromigration design and method thereof
US7525152B2 · kind B2 · utility
1Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 23, 2007 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Apr 25, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An RF power transistor with a metal design (70) comprises a drain pad (72) and a plurality of metal drain fingers (74) extending from the drain pad, wherein at least one metal drain finger comprises one or more sections of metal (74-1, 74-2, 100-1, 100-2, 100-3), each section of metal including of one or more branch (54-1, 54-2, 116-1, 116-2, 116-11, 116-21, 116-41) of metal having a metal width maintained within a bamboo regime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.