CMOS sensor with electrodes across photodetectors at approximately equal potential
US7525168B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 22, 2008 |
| Grant date | Apr 28, 2009 |
| Priority date | — |
| Expiry date | Feb 22, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A MOS or CMOS based active pixel sensor designed for operation with zero or close to zero potential across the pixel photodiodes to minimize or eliminate dark current. In preferred embodiments the pixel photodiodes are produced with a continuous pin or nip photodiode layer laid down over pixel electrodes of the sensor. In this preferred embodiment, the voltage potential across the pixel photodiode structures is maintained constant and close to zero, preferably less than 1.0 volts. This preferred embodiment enables the photodiode to be operated at a constant bias condition during the charge detection cycle. Setting this constant bias condition close to zero (near “short circuit” condition) assures that dark current is substantially zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.