Etchant, method of etching, laminate formed thereby, and device

US7527742B2 · kind B2 · utility

Assignee

• Momentive Performance Materials GmbH · US

Inventors

• Steven Alfred Tysoe · Ballston Spa, US
• Steven Francis LeBoeuf · Raleigh, US
• Mark P. D'Evelyn · Fremont, US
• Venkat Subramaniam Venkataramani · Clifton Park, US
• Vinayak Tilak · Clifton Park, US
• Jeffrey Fortin · Niskayuna, US
• Charles Becker · Rexford, US
• Stephen Daley Arthur · Glenville, US
• Samhita Dasgupta · Niskayuna, US
• Kanakasabapathi Subramanian · Clifton Park, US
• Robert J. Wojnarowski · Zion, US
• Abasifreke Ebong · Marietta, US

Key dates

• Filing date: Jun 27, 2005
• Grant date: May 5, 2009
• Expiry date: Nov 23, 2025

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31111
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An etchant including a halogenated salt, such as Cryolite (Na3AlF6) or potassium tetrafluoro borate (KBF4), is provided. The salt may be present in the etchant in an amount sufficient to etch a substrate and may have a melt temperature of greater than about 200 degrees Celsius. A method of wet etching may include contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the support layer may include aluminum oxide; or contacting an etchant to at least one surface of a support layer of a multi-layer laminate, wherein the etchant may include Cryolite (Na3AlF6), potassium tetrafluoro borate (KBF4), or both; and etching at least a portion of the support layer. The method may provide a laminate produced by growing a crystal onto an aluminum oxide support layer, and chemically removing at least a portion of the support layer by wet etch. An electronic device, optical device or combined device including the laminate is provided.