Reticle and optical proximity correction method
US7527900B2 · kind B2 · utility
133Cited by
2References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Nov 10, 2005 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Apr 4, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/62
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An OPC method includes providing a primary mask having a primary pattern, forming an assist mask having a correction pattern substantially complementary to the primary pattern, and forming a reticle by overlapping the primary mask and the assist mask. The light transmittance of the correction pattern is adjustable so as to equalize the light intensity distribution of the primary mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.