Method of repairing phase shift mask
US7527901B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2005 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Feb 12, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/32
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of repairing a phase shift mask includes exposing upper and side surfaces of the phase shift pattern of the mask, selectively forming a passivation layer on the surfaces of the exposed phase shift patterns, and then cleaning the phase shift mask on which the passivation layers are formed. The repairing of the phase shift mask is carried out in the midst of a series of photolithographic exposure processes in which the phase shift mask is used to transfer an image to a photoresist layer or layers. After the photomask is cleaned, a determination is made as to whether the transmittance of the phase shift pattern is above a threshold value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.