Inventor · Suwon-si, KR

Seong-woon Choi

28Patents
5h-index
58Co-inventors
68Inventor score

Filing activity: Aug 5, 2002 → Feb 28, 2012

Most-cited inventions

PatentTitleAreaCited byStatus
US8039196B2 Method of forming fine patterns using a block copolymer Performing Operations; Transporting 66 Active
US7001697B2 Photomask having a transparency-adjusting layer, method of manufacturing the photomask, and exposure method using the photomask Physics 22 Expired
US6835507B2 Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare Physics 8 Expired
US8338310B2 Method of forming line/space patterns Electricity 8 Active
US8392854B2 Method of manufacturing semiconductor device by using uniform optical proximity correction Emerging Cross-Sectional Technologies 7 Active
US8399174B2 Method of forming fine patterns using a block copolymer Performing Operations; Transporting 5 Active
US7560198B2 Photo-mask having exposure blocking region and methods of designing and fabricating the same Physics 5 Active
US6866968B2 Photomask for off-axis illumination and method of fabricating the same Physics 5 Expired
US8173358B2 Method of forming fine patterns of a semiconductor device Emerging Cross-Sectional Technologies 4 Active
US7527901B2 Method of repairing phase shift mask Physics 3 Active
US8227349B2 Method of forming a mask pattern, method of forming a minute pattern, and method of manufacturing a semiconductor device using the same Electricity 3 Active
US8263487B2 Method of forming patterns of semiconductor device Electricity 3 Active
US7389491B2 Methods, systems and computer program products for correcting photomask using aerial images and boundary regions Physics 3 Active
US7521156B2 Photo mask and method of correcting the transmissivity of a photo mask Physics 2 Active
US8510684B2 Method of forming a photomask layout using optical proximity correction to compensate for a three-dimensional mask effect Physics 2 Active
US7601467B2 Method of manufacturing EUVL alternating phase-shift mask Physics 2 Active
US7393615B2 Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare Physics 1 Active
US7070891B2 Photomask, method for manufacturing the same, and method for measuring optical characteristics of wafer exposure system using the photomask during operation Physics 1 Expired
US7369254B2 System and method for measuring dimension of patterns formed on photomask Physics 1 Expired
US8689150B2 Method of fabricating semiconductor device Physics 1 Active
US7465524B2 Photomask and method of controlling transmittance and phase of light using the photomask Physics 1 Active
US7065735B2 Method for making an OPC mask and an OPC mask manufactured using the same Electricity 1 Expired
US8341561B2 Methods of arranging mask patterns and associated apparatus Physics 1 Active
US7341809B2 Photomask, method for manufacturing the same, and method for measuring optical characteristics of wafer exposure system using the photomask during operation Physics 0 Expired
US8536347B2 Photoacid generator, chemically amplified resist composition including the same, and associated methods Physics 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.