Method and structure for fabricating smooth mirrors for liquid crystal on silicon devices
US7527993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2004 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Aug 19, 2025 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/136277
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for fabricating a liquid crystal on silicon display device. The method includes providing a substrate, e.g., silicon wafer. The method includes forming a transistor layer overlying the substrate. Preferably, the transistor layer has a plurality of MOS devices therein. The method includes forming an interlayer dielectric layer (e.g., BPSG, FSG) overlying the transistor layer. The method includes planarizing the interlayer dielectric layer and forming a sacrificial layer (e.g., bottom antireflective coating, polymide, photoresist, polysilicon) overlying the planarized interlayer dielectric layer. The method includes forming a plurality of recessed regions within a portion of the interlayer dielectric layer through the sacrificial layer while other portions of the interlayer dielectric layer remain intact. Preferably, lithographic techniques are used for forming the recessed regions. The method includes forming an aluminum layer (or other reflective layer or multilayers) to fill the recessed regions and overlying remaining portions of the sacrificial layer and selectively removing the aluminum layer overlying portions of the sacrificial layer to form a plurality of electrode …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.