Roger Lee
126Patents
32h-index
32Co-inventors
90Inventor score
Filing activity: Jul 24, 1991 → Jan 31, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5260593A | Semiconductor floating gate device having improved channel-floating gate interaction | Electricity | 107 | Expired |
| US5424993A | Programming method for the selective healing of over-erased cells on a flash erasable programmable read-only memory device | Physics | 107 | Expired |
| US5168073A | Method for fabricating storage node capacitor having tungsten and etched tin storage node capacitor plate | Electricity | 102 | Expired |
| US6383861B1 | Method of fabricating a dual gate dielectric | Electricity | 101 | Expired |
| US5175120A | Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors | Electricity | 100 | Expired |
| US5751039A | Programmable non-volatile memory cell and method of forming a non-volatile memory cell | Electricity | 98 | Expired |
| US5200652A | Programmable/reprogrammable structure combining both antifuse and fuse elements | Physics | 93 | Expired |
| US6358756B1 | Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme | Electricity | 90 | Expired |
| US6137133A | Programmable non-volatile memory cell and method of forming a non-volatile memory cell | Electricity | 89 | Expired |
| US6498062B2 | DRAM access transistor | Electricity | 87 | Expired |
| US5257225A | Method for programming programmable devices by utilizing single or multiple pulses varying in pulse width and amplitude | Physics | 86 | Expired |
| US5229316A | Semiconductor processing method for forming substrate isolation trenches | Emerging Cross-Sectional Technologies | 77 | Expired |
| US5233206A | Double digitlines for multiple programming of prom applications and other anti-fuse circuit element applications | Electricity | 74 | Expired |
| US5282158A | Transistor antifuse for a programmable ROM | Electricity | 63 | Expired |
| US5159430A | Vertically integrated oxygen-implanted polysilicon resistor | Emerging Cross-Sectional Technologies | 59 | Expired |
| US5250459A | Electrically programmable low resistive antifuse element | Electricity | 59 | Expired |
| US6159818A | Method of forming a container capacitor structure | Emerging Cross-Sectional Technologies | 57 | Expired |
| US5192703A | Method of making tungsten contact core stack capacitor | Electricity | 55 | Expired |
| US5208177A | Local field enhancement for better programmability of antifuse PROM | Electricity | 54 | Expired |
| US5257222A | Antifuse programming by transistor snap-back | Physics | 54 | Expired |
| US5306951A | Sidewall silicidation for improved reliability and conductivity | Electricity | 48 | Expired |
| US5292681A | Method of processing a semiconductor wafer to form an array of nonvolatile memory devices employing floating gate transistors and peripheral area having CMOS transistors | Electricity | 48 | Expired |
| US7335543B2 | MOS device for high voltage operation and method of manufacture | Electricity | 46 | Expired |
| US5244826A | Method of forming an array of finned memory cell capacitors on a semiconductor substrate | Electricity | 44 | Expired |
| US5680350A | Method for narrowing threshold voltage distribution in a block erased flash memory array | Physics | 44 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.