Method for fabricating semiconductor device with trench isolation structure
US7528052B2 · kind B2 · utility
2Cited by
12References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 27, 2004 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | May 16, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor device with a device isolation structure and a method for fabricating the same. The semiconductor device includes: a substrate provided with a trench formed in the substrate; and at least one device isolation structure including an oxide layer formed on the trench, a nitride layer formed on the oxide layer disposed on sidewalls of the trench and a high density plasma oxide layer formed on the nitride layer to fill the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.