Sputtering apparatus and method for forming metal silicide layer using the same
US7528070B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2005 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Apr 23, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/2855
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sputtering apparatus for forming a low-resistance uniform metal silicide layer without additional heat treatment and a metal silicide layer forming method using the same are provided. The sputtering apparatus includes a sputtering chamber; a gas introduction port formed at an upper location of a lateral wall of the sputtering chamber; a gas exhaust port formed at a bottom wall of the sputtering chamber; a target located in an upper region of the sputtering chamber; a power source to supply the target with high-frequency electric power; a stage located in a bottom region of the sputtering chamber to heat the semiconductor substrate; and a sieve provided between the target and the semiconductor substrate to improve straightness of charged metal particles.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.