Crystallographic preferential etch to define a recessed-region for epitaxial growth
US7528072B2 · kind B2 · utility
5Cited by
1References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Apr 20, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprising a gate structure on a semiconductor substrate and a recessed-region in the semiconductor substrate. The recessed-region has a widest lateral opening that is near a top surface of the semiconductor substrate. The widest lateral opening undercuts the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.