Semiconductor thin film and process for production thereof
US7528408B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Mar 17, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S117/904
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
To improve the laser annealing process for polycrystallizing amorphous silicon to form silicon thin films having large crystal particle diameters at a high throughput, the present invention is directed to a process of crystallization by irradiation of a semiconductor thin film formed on a substrate with pulsed laser light. The process comprises having a means to shape laser light into a linear beam and a means to periodically and spatially modulate the intensity of pulsed laser in the direction of the long axis of the linear beam by passing through a phase-shifting stripy pattern perpendicular to the long axis, and collectively forming for each shot a polycrystalline film composed of crystals which have grown in a certain direction over the entire region irradiated with the linear beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.