Photodiode having increased proportion of light-sensitive area to light-insensitive area
US7528458B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 2007 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Apr 12, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A photodiode having an increased proportion of light-sensitive area to light-insensitive area includes a semiconductor having a backside surface and a light-sensitive frontside surface. The semiconductor includes a first active layer having a first conductivity, a second active layer having a second conductivity opposite the first conductivity, and an intrinsic layer separating the first and second active layers. A plurality of isolation trenches are arranged to divide the photodiode into a plurality of cells. Each cell has a total frontside area including a cell active frontside area sensitive to light and a cell inactive frontside area not sensitive to light. The cell active frontside area forms at least 95 percent of the cell total frontside area. A method of forming the photodiode is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.