Robin Wilson
30Patents
7h-index
9Co-inventors
58Inventor score
Filing activity: Jun 30, 2000 → May 6, 2014
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6326859A | Oscillator circuit having trimmable capacitor array receiving a reference current | Electricity | 130 | Expired |
| US7446018B2 | Bonded-wafer superjunction semiconductor device | Electricity | 29 | Active |
| USD609285S1 | Stuffed toy with fact memory chip | General | 26 | Expired |
| US7576404B2 | Backlit photodiode and method of manufacturing a backlit photodiode | Electricity | 17 | Active |
| US7560791B2 | Front lit PIN/NIP diode having a continuous anode/cathode | Emerging Cross-Sectional Technologies | 11 | Active |
| US7972934B2 | Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes | Electricity | 9 | Active |
| US7601556B2 | Front side electrical contact for photodetector array and method of making same | Emerging Cross-Sectional Technologies | 7 | Active |
| US7553764B2 | Silicon wafer having through-wafer vias | Electricity | 5 | Active |
| US7429772B2 | Technique for stable processing of thin/fragile substrates | Electricity | 4 | Expired |
| US6310510A | Electronic circuit for producing a reference current independent of temperature and supply voltage | Physics | 4 | Expired |
| US7579667B2 | Bonded-wafer superjunction semiconductor device | Electricity | 4 | Active |
| US7528458B2 | Photodiode having increased proportion of light-sensitive area to light-insensitive area | Emerging Cross-Sectional Technologies | 3 | Active |
| US7768085B2 | Photodetector array using isolation diffusions as crosstalk inhibitors between adjacent photodiodes | Electricity | 3 | Active |
| US7741141B2 | Photodiode having increased proportion of light-sensitive area to light-insensitive area | Emerging Cross-Sectional Technologies | 3 | Active |
| US8030133B2 | Method of fabricating a bonded wafer substrate for use in MEMS structures | Performing Operations; Transporting | 1 | Active |
| US7741172B2 | Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode | Emerging Cross-Sectional Technologies | 1 | Active |
| US8913457B2 | Dual clock edge triggered memory | Physics | 1 | Active |
| US8294508B2 | Method and device for driving the frequency of a clock signal of an integrated circuit | Electricity | 1 | Active |
| US7439178B2 | Technique for stable processing of thin/fragile substrates | Electricity | 1 | Active |
| US8730756B2 | Dual clock edge triggered memory | Physics | 1 | Active |
| US7579273B2 | Method of manufacturing a photodiode array with through-wafer vias | Electricity | 1 | Active |
| US8058091B2 | Front lit PIN/NIP diode having a continuous anode/cathode | Emerging Cross-Sectional Technologies | 1 | Active |
| US7999348B2 | Technique for stable processing of thin/fragile substrates | Electricity | 0 | Active |
| US8169057B2 | Positive-intrinsic-negative (PIN)/negative-intrinsic-positive (NIP) diode | Emerging Cross-Sectional Technologies | 0 | Active |
| US7489014B2 | Front side electrical contact for photodetector array and method of making same | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.