Patent · US Active

Semiconductor device, method for manufacturing semiconductor device, circuit board, and electronic instrument

US7528476B2 · kind B2 · utility

10Cited by
3References
9Claims
0Family size

Assignee

Inventor

Key dates

Filing dateDec 16, 2005
Grant dateMay 5, 2009
Priority date
Expiry dateMar 21, 2027

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/19043
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A semiconductor device includes: a semiconductor substrate having an active surface and a back surface; an integrated circuit formed on the active surface; a feedthrough electrode penetrating the semiconductor substrate, and projecting from the active surface and the back surface; a first resin layer formed on the active surface, having a thickness greater than a height of a portion of the feedthrough electrode that projects from the active surface, and having an opening portion for exposing at least a portion of the feedthrough electrode; a wiring layer which is formed on the first resin layer, and which is connected to the feedthrough electrode through the opening portion; and an external connecting terminal connected to the wiring layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.