Dual substrate electrostatic MEMS switch with hermetic seal and method of manufacture
US7528691B2 · kind B2 · utility
21Cited by
12References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2005 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Jul 29, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01H59/0009
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Systems and methods for forming an electrostatic MEMS switch include forming a cantilevered beam on a first substrate, forming the electrical contacts on a second substrate, and coupling the two substrates using a hermetic seal. The hermetic seal may be a gold/indium alloy, formed by heating a layer of indium plated over a layer of gold. Electrical access to the electrostatic MEMS switch may be made by forming vias through the thickness of the second substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.