Low tunneling current MIM structure and method of manufacturing same
US7529078B2 · kind B2 · utility
4Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2006 |
| Grant date | May 5, 2009 |
| Priority date | — |
| Expiry date | Apr 22, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Disclosed herein are new MIM structures having increased capacitance with little or no tunneling current, and related methods of manufacturing the same. In one embodiment, the new MIM structure comprises a first electrode comprising a magnetic metal and having a magnetic moment aligned in a first direction, and a second electrode comprising a magnetic metal and having a magnetic moment aligned in a second direction antiparallel to the first direction. In addition, such an MIM structure comprises a dielectric layer formed between the first and second electrodes and contacting the first and second magnetic metals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.