Inventor · Hsinchu, TW

Hsing-Lien Lin

110Patents
8h-index
52Co-inventors
83Inventor score

Filing activity: Jul 29, 1999 → Mar 13, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6180503A Passivation layer etching process for memory arrays with fusible links Electricity 51 Expired
US9431609B2 Oxide film scheme for RRAM structure Electricity 22 Active
US10164182B1 Switching layer scheme to enhance RRAM performance Electricity 18 Active
US9954166B1 Embedded memory device with a composite top electrode Electricity 18 Active
US9257642B1 Protective sidewall techniques for RRAM Electricity 13 Active
US10176866B1 Recap layer scheme to enhance RRAM performance Physics 11 Active
US9577191B2 RRAM cell bottom electrode formation Electricity 8 Active
US9847401B2 Semiconductor device and method of forming the same Electricity 8 Active
US9978938B2 Resistive RAM structure and method of fabrication thereof Electricity 8 Active
US9647207B2 Resistive random access memory (RRAM) structure Electricity 8 Active
US9627613B2 Resistive random access memory (RRAM) cell with a composite capping layer Electricity 7 Active
US10193065B2 High K scheme to improve retention performance of resistive random access memory (RRAM) Electricity 6 Active
US9418999B2 MIM capacitors with improved reliability Electricity 6 Active
US9484537B2 Organic photo diode with dual electron blocking layers Emerging Cross-Sectional Technologies 5 Active
US7199001B2 Method of forming MIM capacitor electrodes Electricity 5 Expired
US9960353B2 Method of fabricating an organic photodiode with dual electron blocking layers Emerging Cross-Sectional Technologies 4 Active
US10622555B2 Film scheme to improve peeling in chalcogenide based PCRAM Emerging Cross-Sectional Technologies 4 Active
US7529078B2 Low tunneling current MIM structure and method of manufacturing same Electricity 4 Active
US9728597B2 Metal-insulator-metal structure and method for forming the same Electricity 4 Active
US9543375B2 MIM/RRAM structure with improved capacitance and reduced leakage current Electricity 4 Active
US10505107B2 Switching layer scheme to enhance RRAM performance Electricity 4 Active
US10910560B2 RRAM structure Electricity 4 Active
US9450183B2 Memory structure having top electrode with protrusion Electricity 4 Active
US9825117B2 MIM/RRAM structure with improved capacitance and reduced leakage current Electricity 3 Active
US9425240B2 Image sensors with organic photodiodes and methods for forming the same Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.