Patent · US Active

Semiconductor device and method of fabricating the same

US7529147B2 · kind B2 · utility

6Cited by
9References
12Claims
0Family size

Assignee

Inventor

Key dates

Filing dateNov 2, 2006
Grant dateMay 5, 2009
Priority date
Expiry dateNov 29, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

The semiconductor device has a semiconductor substrate; an electric fuse provided on the semiconductor substrate, and having a first fuse link and a second fuse link connected in series; and a terminal provided between the first fuse link and the second fuse link, wherein the first fuse link and the second fuse link are configured as being different from each other in current value necessary for blowing.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.