Method of manufacturing semiconductor device

US7531389B2 · kind B2 · utility

Assignee

• SONY GROUP CORPORATION · JP

Inventor

• Tetsuya Ikuta · Chigasaki, JP

Key dates

• Filing date: Feb 15, 2008
• Grant date: May 12, 2009
• Expiry date: Feb 15, 2028

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D18/01

Abstract

Disclosed herein is a method of manufacturing a semiconductor device having a thyristor formed by joining a first p-type semiconductor layer, a first n-type semiconductor layer, a second p-type semiconductor layer, and a second n-type semiconductor layer in order, the method including the steps of: forming the second p-type semiconductor layer including a p-type impurity in a surface layer of a semiconductor substrate; forming the first n-type semiconductor layer including an n-type impurity on the semiconductor substrate including the second p-type semiconductor layer by epitaxial growth; forming a non-doped semiconductor layer on the first n-type semiconductor layer by epitaxial growth; and forming the first p-type semiconductor layer including a p-type impurity on the non-doped semiconductor layer by epitaxial growth.