Recycling the reconditioned substrates for fabricating compound material wafers
US7531428B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 18, 2005 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Mar 16, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/933
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for fabricating compound material wafers are described. An embodiment of the method includes providing a donor substrate having a surface, forming a weakened zone in the donor substrate to define a transfer layer that includes the donor substrate surface, bonding the surface of the transfer layer to a handle substrate, and detaching the donor substrate at the weakened zone to transfer the transfer layer onto the handle substrate. Consequently, a compound material wafer is formed, and the transfer layer detached donor wafer provides a remainder substrate having a surface where the transfer layer was detached. Next, an additional layer is deposited onto a surface of the remainder substrate to increase its thickness and to form a reconditioned substrate, and the reconditioned substrate is recycled as a donor substrate for fabricating additional compound material wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.