Patent · US Expired

Homoepitaxial growth of SiC on low off-axis SiC wafers

US7531433B2 · kind B2 · utility

15Cited by

7References

14Claims

0Family size

Assignee

Norstel AB · SE

Inventors

Alexandre Ellison · Säter, SE
Christer Hallin · Chapel Hill, US
Björn Magnusson · Säter, SE
Peder Bergman · Säter, SE

Key dates

Filing date	Jul 14, 2005
Grant date	May 12, 2009
Priority date	—
Expiry date	Jul 14, 2025

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/931
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 μm.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.