Manufacturing method of semiconductor device and substrate processing apparatus
US7531467B2 · kind B2 · utility
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2References
3Claims
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Key dates
| Filing date | Jan 21, 2005 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Nov 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a manufacturing method of a semiconductor device and a substrate processing apparatus capable of easily controlling a nitrogen concentration distribution in a film containing a metal atom and a silicon atom, and manufacturing a high quality semiconductor device.The method comprises a step of forming a film containing the metal atom and the silicon atom on a substrate 30 in a reaction chamber 4, and performing a nitriding process for the film, wherein the film is formed by changing a silicon concentration at least in two stages in the step of forming a film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.