CMOS image device having high light collection efficiency and method of fabricating the same
US7531779B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2005 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Apr 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
A CMOS image device comprises a semiconductor substrate having a photo diode region formed therein, an inner lens formed at a position corresponding to the photo diode region on the semiconductor substrate, and an auxiliary lens formed on the inner lens along a surface of the inner lens, wherein the auxiliary lens has a same index of refraction as the inner lens.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.