Focused ion beam apparatus and sample section forming and thin-piece sample preparing methods
US7531796B2 · kind B2 · utility
2Cited by
3References
6Claims
0Family size
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Key dates
| Filing date | Aug 17, 2007 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Dec 18, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Detected is a secondary electron generated by irradiating a focused ion beam while performing etching a sample section and the around through scan-irradiating the focused ion beam. From a changing amount of the detected secondary electron signal an end-point detecting mechanism detects an end point to thereby terminate the etching, so that a center position of a defect or a contact hole is effectively detected even with an FIB apparatus not having a SEM observation function.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.