Semiconductor device having strain-inducing substrate and fabrication methods thereof
US7531854B2 · kind B2 · utility
2Cited by
4References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 4, 2007 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | May 4, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/221
Abstract
A semiconductor device includes a semiconductor substrate that includes a substrate layer having a first composition of semiconductor material. A source region, drain region, and a channel region are formed in the substrate, with the drain region spaced apart from the source region and the gate region abutting the channel region. The channel region includes a channel layer having a second composition of semiconductor material. Additionally, the substrate layer abuts the channel layer and applies a stress to the channel region along a boundary between the substrate layer and the channel layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.