Image sensor with buried barrier layer having different thickness according to wavelength of light and method of forming the same
US7531857B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 19, 2006 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Sep 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
Abstract
There is provided an image sensor and a method of forming the same in order to prevent cross talk and to improve sensitivity. The image sensor includes a plurality of pixels for embodying colors having different wavelengths, and each of pixels includes a photoelectric conversion unit and a buried barrier layer having different thicknesses according to the wavelengths. The method of forming the image sensor includes: forming an epitaxial layer of a first type on a semiconductor substrate of a first type; and forming a buried barrier layer in the first type of epitaxial layer. The buried barrier layer is formed to have different thickness according to the wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.