Semiconductor devices having transistors with different gate structures and methods of fabricating the same
US7531881B2 · kind B2 · utility
1Cited by
1References
14Claims
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Key dates
| Filing date | Apr 7, 2006 |
| Grant date | May 12, 2009 |
| Priority date | — |
| Expiry date | Aug 11, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has two transistors of different structure from each other. One of transistors is P-type and the other is N-type. One of the transistors includes a gate structure in which a polysilicon layer contacts a gate insulation film while the other transistor includes a gate structure in which a metal layer contacts a gate insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.