Fabrication process for magneto-resistive effect devices of the CPP structure
US7533456B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 1, 2007 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Jun 1, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49052
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A free layer functions such that a magnetization direction changes depending on an external magnetic field, and is made up of a multilayer structure including a first Heusler alloy layer, and a fixed magnetization layer takes a form wherein an inner pin layer and an outer pin layer are stacked one upon another with a nonmagnetic intermediated layer sandwiched between them. The inner pin layer is made up of a multilayer structure including a second Heusler alloy layer. The first and second Heusler alloy layers are each formed by a co-sputtering technique using a split target split into at least two sub-targets in such a way as to constitute a Heusler alloy layer composition. When the Heusler alloy layer is formed, therefore, it is possible to bring up a film-deposition rate, improve productivity, and improve the performance of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.