Inventor · Tokyo, JP

Tomohito Mizuno

71Patents
6h-index
35Co-inventors
72Inventor score

Filing activity: Oct 10, 1991 → Jan 12, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US8169731B2 Near-field light transducer comprising propagation edge with predetermined curvature radius Physics 11 Active
US7961438B2 Magnetoresistive device of the CPP type, and magnetic disk system Physics 11 Active
US7609490B2 Magnetoresistive device, thin film magnetic head, head gimbal assembly, head arm assembly, magnetic disk apparatus, synthetic antiferromagnetic magnetization pinned layer, magnetic memory cell, and current sensor Physics 9 Active
US7782575B2 Magnetoresistive element having free layer, pinned layer, and spacer layer disposed therebetween, the spacer layer including semiconductor layer Physics 9 Active
US7656621B2 Magneto-resistive element having a cap layer for canceling spin injection effect Physics 8 Active
US11703380B2 Receiving device, transceiver device, communication system, portable terminal device, and photodetection element Electricity 6 Active
US7672085B2 CPP type magneto-resistive effect device having a semiconductor oxide spacer layer and magnetic disk system Physics 6 Active
US8000066B2 Hard disk system incorporating a current perpendicular to plane magneto-resistive effect device with a spacer layer in the thickness range showing conduction performance halfway between OHMIC conduction and semi-conductive conduction Physics 6 Active
US7855859B2 Magnetoresistive element and magnetic head Electricity 5 Active
US7672092B2 Method for manufacturing magnetic field detecting element, utilizing diffusion of metal Emerging Cross-Sectional Technologies 5 Active
US11722222B2 Transceiver device Electricity 5 Active
US8094420B2 Magnetoresistive device of the CCP (current perpendicular to plane) type with single-domain control of magnetization, and associated magnetic disk system Physics 5 Active
US8666692B2 Method of estimating curie temperature distribution in a magnetic recording layer Physics 4 Active
US8614934B1 Method for characterization evaluation of thermally-assisted magnetic recording device Physics 4 Active
US7310210B2 Magnetoresistive sensor having cobalt-iron alloy layer in free layer Physics 4 Expired
US7826180B2 Magneto-resistive effect device of the CPP structure, and magnetic disk system Electricity 4 Active
US7533456B2 Fabrication process for magneto-resistive effect devices of the CPP structure Emerging Cross-Sectional Technologies 4 Active
US5210736A Mobile recording-medium playing apparatus Performing Operations; Transporting 4 Expired
US8472149B2 CPP type magneto-resistive effect device and magnetic disk system Electricity 4 Active
US7920362B2 Magnetio-resistive device including a multi-layer spacer which includes a semiconductor oxide layer Physics 3 Active
US7885042B2 CPP magneto-resistive effect device utilizing an anti-oxidizing layer as part of the spacer layer in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system Emerging Cross-Sectional Technologies 3 Active
US8085512B2 CPP-type magnetoresistance effect element having a pair of free layers Physics 3 Active
US8374060B2 Thermally-assisted magnetic recording method for writing data on a hard disk medium Physics 3 Active
US8599652B2 Thermally-assisted magnetic recording medium and magnetic recording/reproducing device using the same Physics 3 Active
US8149547B2 Magnetoresistive effect element and thin-film magnetic head with the magnetoresistive effect element Physics 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.