Phase change memory with damascene memory element

US7534625B2 · kind B2 · utility

Inventors

• Ilya V. Karpov · Portland, US
• Charles C. Kuo · Hillsboro, US
• Yudong Kim · Cupertino, US
• Fabio Pellizzer · Boise, US

Key dates

• Filing date: Oct 4, 2006
• Grant date: May 19, 2009
• Expiry date: Jul 4, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/882

Abstract

A phase change material may be formed within a trench in a first layer to form a damascene memory element and in an overlying layer to form a threshold device. Below the first layer may be a wall heater. The wall heater that heats the overlying phase change material may be formed in a U-shape in some embodiments of the present invention. The phase change material for the memory element may be elongated in one direction to provide greater alignment tolerances with said heater and said threshold device.