Post plasma ashing wafer cleaning formulation
US7534752B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 17, 2001 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Apr 20, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor wafer cleaning formulation for use in post plasma ashing semiconductor fabrication comprising at least one organic chelating agent and at least one polar solvent, wherein the chelating agent and polar solvent are in sufficient amounts to effectively remove inorganic compound residue from a semiconductor wafer. Preferably, the chelating agent is selected from the group consisting of 2,4-Pentanedione, Malonic acid, Oxalic acid, p-Toluenesulfonic acid, and Trifluoroacetic acid; and the polar solvent is selected from the group consisting of Water, Ethylene glycol, N-Methylpyrrolidone (NMP), Gamma butyrolactone (BLO), Cyclohexylpyrrolidone (CHP), Sulfolane, 1,4-Butanediol, and Butyl carbitol.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.