pH buffered aqueous cleaning composition and method for removing photoresist residue
US7534753B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 12, 2006 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Oct 27, 2027 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A residue cleaning composition includes: (a) water; (b) a fluoride; (c) a pH buffer system including an organic acid and a base. The organic acid can be an aminoalkylsulfonic acid and/or an aminoalkylcarboxylic acid. The base can be an amine and/or a quaternary alkylammonium hydroxide. The composition is substantially free of an added organic solvent and has a pH ranging from about 5 to about 12. A method of removing residue from a substrate includes contacting the residue with the cleaning composition. A method for defining a pattern includes etching the pattern through a photoresist into a substrate, heating the patterned substrate to a temperature sufficient to ash the photoresist and provide a residue, and removing the residue by contacting the residue with the cleaning composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.