Vertical carbon nanotube transistor integration

US7535016B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Toshiharu Furukawa · South Burlington, US
• Mark C. Hakey · Saint Albans, US
• David V. Horak · South Burlington, US
• Charles W. Koburger, III · Delmar, US
• Mark E. Masters · South Burlington, US
• Peter H. Mitchell · Jericho, US

Key dates

• Filing date: Jan 31, 2005
• Grant date: May 19, 2009
• Expiry date: Jan 31, 2025

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S977/938
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A hybrid semiconductor structure which includes a horizontal semiconductor device and a vertical carbon nanotube transistor, where the vertical carbon nanotube transistor and the horizontal semiconductor device have at least one shared node is provided. The at least one shared node can include, for example, a drain, source or gate electrode of a FET, or an emitter, collector, or base of a bipolar transistor.