PNP light emitting transistor and method
US7535034B2 · kind B2 · utility
29Cited by
27References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2006 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Apr 24, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/00
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light-emitting transistor device, including: a bipolar pnp transistor structure having a p-type collector, an n-type base, and a p-type emitter; a first tunnel junction coupled with the collector, and a second tunnel junction coupled with the emitter; and a collector contact coupled with the first tunnel junction, an emitter contact coupled with the second tunnel junction, and a base contact coupled with the base; whereby, signals applied with respect to the collector, base, and emitter contacts causes light emission from the base by radiative recombination in the base.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.