Trench transistor

US7535055B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Sven Lanzerstorfer · Feldkirchen in Kärnten, AT
• Dietmar Kotz · Moosburg, AT
• Hermann Peri · Wernberg, AT
• Norbert Krischke · Munich, DE

Key dates

• Filing date: Jun 28, 2007
• Grant date: May 19, 2009
• Expiry date: Aug 26, 2027

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A trench transistor is disclosed. One embodiment has an active zone enclosed by an edge trench, wherein an edge electrode at gate potential is embedded into the edge trench, and the active zone has a mesa structure at least partly adjoining the edge trench. That region of the mesa structure which adjoins the edge trench is at least partly electrically deactivated by virtue of the fact that within this deactivated region a) the mesa structure is covered with a mesa insulation layer, and b) no source zone is provided.