Dietmar Kotz
8Patents
2h-index
15Co-inventors
44Inventor score
Filing activity: Sep 10, 2004 → Mar 30, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7612408B2 | MOS transistor device | Electricity | 24 | Expired |
| US8030703B2 | Field-effect transistor and method for manufacturing a field-effect transistor | Electricity | 4 | Active |
| US7863680B2 | Semiconductor component and method for producing it | Electricity | 2 | Active |
| US9941402B2 | Semiconductor devices and methods for forming a semiconductor device | Electricity | 1 | Active |
| US7535055B2 | Trench transistor | Electricity | 0 | Active |
| US10199490B2 | Semiconductor device with a guard structure and corresponding methods of manufacture | Electricity | 0 | Active |
| US7446373B2 | Semiconductor component and method for producing it | Electricity | 0 | Expired |
| US10453915B2 | Semiconductor device having a field electrode and a gate electrode in a trench structure and manufacturing method | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.