Fin-field effect transistors (Fin-FETs) having protection layers

US7535061B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Deok-Hyung Lee · Seoul, KR
• Si-Young Choi · Yongin-si, KR
• Byeong-Chan Lee · Seojong-myeon, KR
• In-Soo Jung · Yongin-si, KR
• Jin-Hwa Heo · Seojong-myeon, KR

Key dates

• Filing date: Oct 25, 2006
• Grant date: May 19, 2009
• Expiry date: Oct 25, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/024

Abstract

Fin-Field Effect Transistors (Fin-FETs) are provided. A fin is provided on an integrated circuit substrate. The fin defines a trench on the integrated circuit substrate. A first insulation layer is provided in the trench such that a surface of the first insulation layer is recessed beneath a surface of the fin exposing sidewalls of the fin. A protection layer is provided on the first insulation layer and a second insulation layer is provided on the protection layer in the trench such that protection layer is between the second insulation layer and the sidewalls of the fin.