Aluminum fluoride films for microelectromechanical system applications
US7535621B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 27, 2006 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Feb 23, 2027 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/112
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A microelectromechanical systems (MEMS) device utilizing an aluminum fluoride layer as an etch stop is disclosed. In one embodiment, a MEMS device includes a first electrode having a first surface; and a second electrode having a second surface facing the first surface and defining a gap therebetween. The second electrode is movable in the gap between a first position and a second position. At least one of the electrodes includes an aluminum fluoride layer facing the other of the electrodes. During fabrication of the MEMS device, a sacrificial layer is formed between the first and second electrodes and is released to define the gap. The aluminum fluoride layer serves as an etch stop to protect the first or second electrode during the release of the sacrificial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.