Patent · US Active

Reading multi-cell memory devices utilizing complementary bit information

US7535767B2 · kind B2 · utility

7Cited by
3References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 6, 2007
Grant dateMay 19, 2009
Priority date—
Expiry dateDec 11, 2027

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5634
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Providing differentiation between overlapping memory cell bits in multi-cell memory devices is described herein. By way of example, select groups of memory cells of the multi-cell memory devices can be iteratively disabled to render state distributions of remaining, non-disabled memory cells, non-overlapped. System components can measure distributions rendered non-overlapped to uniquely identify states of such distributions. Identified state distributions can subsequently be disabled to render other state distributions non-overlapped, and therefore identifiable. In such a manner, read errors associated with overlapped bit states of multi-cell memory devices can be mitigated.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.