Method for verifying and choosing lithography model
US7536670B2 · kind B2 · utility
6Cited by
6References
21Claims
0Family size
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Key dates
| Filing date | May 31, 2005 |
| Grant date | May 19, 2009 |
| Priority date | — |
| Expiry date | Feb 12, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70516
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A test mask with both verification structures and calibration structures is provided to enable the formation of an image of at least one verification structure and at least one calibration structure at a plurality of different test site locations under different dose and defocus conditions to allow the calibration structures to be measured and to obtain at least one computational model for optical proximity correction purposes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.