Patent · US Active

Silicon wafer and process for producing it

US7537657B2 · kind B2 · utility

1Cited by

12References

27Claims

0Family size

Assignee

Siltronic AG · DE

Inventors

Christoph Seuring · Burghausen, DE
Robert Hoelzl · Milwaukee, US
Reinhold Wahlich · Burghausen, DE
Wilfried von Ammon · Burghausen, DE

Key dates

Filing date	Jun 29, 2006
Grant date	May 26, 2009
Priority date	—
Expiry date	Aug 18, 2026

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T117/1012
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A process for producing a single-crystal silicon wafer, comprises the following steps: is satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi]eq(T) is a limit solubility of oxygen in silicon at a temperature T, σSiO2 is the surface energy of silicon dioxide, Ω is a volume of a precipitated oxygen atom, r is a mean COP and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part of the time being exposed to an oxygen-containing atmosphere.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.